ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES

[SIERRA SEMICONDUCTOR]

ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES

[SIERRA SEMICONDUCTOR]

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

WITH CONTROL MEMORY 4 X 4 X 2 CROSSPOINT SWITCHES

DESCRIPTION The M22101 and M22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates), 4-line to 16-line decoders, and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line addressand any number ofcrosspoin