ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES

[SIERRA SEMICONDUCTOR]

ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES

[SIERRA SEMICONDUCTOR]

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages