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SBT3045

Schottky Rectifier

Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● VRRM - 40 to 50V ● 30 Amperes ● Reverse Energy Tested

MICROSEMI

美高森美

SBT3045

Si Schottky Rectifier Diodes

30A (per leg) 40V-50V Schottky rectifier in TO3 package

MICROCHIP

微芯科技

SBT3045

Schottky Rectifier

文件:161.98 Kbytes Page:3 Pages

MICROSEMI

美高森美

LOW VF SCHOTTKY BARRIER RECTIFIERS

Features Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction

SUNMATE

森美特

30 Ampere low vf Schottky diode

Features Low Forward Voltage Drop Reliable High Temperature Operation Softest, Fast Switching Capability 150℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant Applications Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applicati

ASEMI

强元芯电子

30 Ampere low vf Schottky diode

Features Low Forward Voltage Drop Reliable High Temperature Operation Softest, Fast Switching Capability 150℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant Applications Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applicati

ASEMI

强元芯电子

LOW VF SCHOTTKY BARRIER RECTIFIERS

Features Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction

SUNMATE

森美特

Schottky Rectifier

文件:161.98 Kbytes Page:3 Pages

MICROSEMI

美高森美

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER SCHOTTKY 分立半导体产品 二极管 - 整流器 - 阵列

MICROCHIP

微芯科技

Schottky Rectifier

文件:161.98 Kbytes Page:3 Pages

MICROSEMI

美高森美

Schottky Rectifier

文件:161.98 Kbytes Page:3 Pages

MICROSEMI

美高森美

超级肖特基二极管

PANJIT

強茂

低压降肖特基二极管

ASEMI

强元芯电子

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

MOTOROLA

摩托罗拉

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

PHILIPS

飞利浦

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

SBT3045产品属性

  • 类型

    描述

  • AEC Qualified:

    NO

  • Pb Free:

    YES

  • Halide free:

    YES

  • Reach:

    YES

  • RoHS:

    YES

  • Marketing Status:

    Active

  • Configuration:

    Dual

  • VRRM(V)max.:

    45

  • IF(A)max.:

    30

  • VF (V)max:

    0.55

  • IFSM(A)max.:

    250

  • IR(uA)max.:

    1000

  • TJ(°C)max.:

    150

  • TJ(°C)min.:

    -55

  • ECCN(US):

    EAR99

  • Category:

    功率肖特基二极管

更新时间:2026-5-19 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PEC
23+
R-6
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择

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