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SBM2045VDC

UlTRA LOW VF SCHOTTKY RECTIFIER

文件:99.54 Kbytes Page:5 Pages

PANJIT

強茂

SBM2045VDC

Power Schottky

PANJIT

強茂

UlTRA LOW VF SCHOTTKY RECTIFIER

文件:99.54 Kbytes Page:5 Pages

PANJIT

強茂

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:盒 描述:ULTRA LOW VF SCHOTTKY RECTIFIER 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

UlTRA LOW VF SCHOTTKY RECTIFIER

文件:99.54 Kbytes Page:5 Pages

PANJIT

強茂

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

PHILIPS

飞利浦

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

SBM2045VDC产品属性

  • 类型

    描述

  • VRRM Max.[V]:

    45

  • IF[A]:

    20

  • IFSM[A]:

    280

  • VF@IF Max.[V]:

    0.45

  • VF@IF Max.[A]:

    10

  • IR@VR Max.[µA]:

    320

  • IR@VR Max.[V]:

    45

  • Package:

    TO-263

更新时间:2026-8-1 11:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
N/A
2450+
SOT89
6540
只做原装正品现货或订货!终端客户免费申请样品!
DIODES
25+
SOT-252
90000
一级代理商进口原装现货、假一罚十价格合理
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
DIODES/美台
20+
SMD
32500
现货很近!原厂很远!只做原装
DIODES/美台
2447
STD202
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
PJ
23+
TO263
50000
全新原装正品现货,支持订货
24+
35200
一级代理/放心采购
DIODES
0509+
POWERMITE3
1039
原装现货海量库存欢迎咨询
DIODES/美台
2402+
POWERMITE3
8324
原装正品!实单价优!
DIODES
22+
SOT-252
5000
原装现货库存.价格优势

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