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SBLB2030CT

SCHOTTKY RECTIFIER

Reverse Voltage - 30 and 40 Volts Forward Current - 20.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low f

GE

SBLB2030CT

Dual Low VF Schottky Barrier Rectifiers

文件:250.7 Kbytes Page:3 Pages

GOOD-ARK

固锝电子

SBLB2030CT

SCHOTTKY BARRIER RECTIFIERS

文件:254.59 Kbytes Page:2 Pages

DSK

SBLB2030CT

Schottky Barrier Rectifier

文件:140.52 Kbytes Page:3 Pages

BILIN

银河微电

SBLB2030CT

肖特基二极管

GALAXY

银河微电

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C,

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件:143.38 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件:144.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:托盘 描述:DIODE ARRAY SCHOTTKY 30V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual Common Cathode Schottky Rectifier

文件:144.9 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件:143.38 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE ARRAY SCHOTTKY 30V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

DECT 500 mW power amplifier

GENERAL DESCRIPTION The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. FEATURES • Power Amplifier (PA) overall eff

PHILIPS

飞利浦

Integrated Circuit High Voltage Segment Driver for Gas Discharge Tubes

Description: The NTE2030 is capable of driving 8 segments of a high voltage display tube with a constant output sink current, which can be adjusted by external program resistor, Rp. The program current is half that of output “ON” current. In the “OFF” state the outputs can tolerate more than 80

NTE

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

PANJIT

強茂

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

SBLB2030CT产品属性

  • 类型

    描述

  • Configuration:

    Dual

  • VRRMMax(V):

    30

  • IAVMax(A):

    20

  • VFMMax(V):

    0.55

  • @ IF(A):

    20

  • IFSMMax(A):

    250

  • IRMax(uA):

    500

  • @VR(V):

    30

  • Package Outlines:

    TO-263

更新时间:2026-5-16 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
20000
Vishay Semiconductor Diodes Di
22+
TO263AB
9000
原厂渠道,现货配单
VISHAY
22+
TO263
20000
公司只做原装 品质保障
Vishay Semiconductor Diodes Di
23+
TO263AB
8000
只做原装现货
Vishay Semiconductor Diodes Di
23+
TO263AB
7000
VISHAY
0718+
TO263
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY
23+
TO263
2600
原厂原装正品
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
FAGOR
23+
TO220AB
69820
终端可以免费供样,支持BOM配单!

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