30A SCHOTTKY BARRIER RECTIFIER

30A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free

Low VF Schottky Barrier Rectifiers

[Sirectifier] FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity pro

Low VF Schottky Barrier Rectifiers

Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whell

Schottky Barrier Rectifier

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LowVp Schottky Barrier Rectifiers

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封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

DIODE ARRAY SCHOTTKY 45V TO3P

SCHOTTKY BARRIER RECTIFIER

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30A SCHOTTKY BARRIER RECTIFIER

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萧特基 (Schottky)(.5A 和以上)

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

LM3045/LM3046/LM3086 Transistor Arrays

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LM3045/LM3046/LM3086 Transistor Arrays

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