Schottky Barrier Diode 30 V, 0.5 A, Low IR

Features • Low Forward Voltage (VF Max = 0.55 V) • Fast Reverse Recovery Time (trr Max = 10 ns) • Composite Type with 2 Diodes Contained in the CPH Package Currently in Use, Improving the Mounting Efficiency Greatly • The Chips Incorporated are Both Equivalent to the SB05−03C • This Device i

30V, 500mA Rectifier

30V, 500mA Rectifier Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Composite type with 2 diodes contained in the CPH package currently in use, improving the mounting efficiency greatly. • The chips incorporated are both equivalent to the SB05-03

肖特基势垒整流器，30V，0.5A，低 IR

SBE805 is Schottky Barrier Diode, 30V, 0.5A, Low IR for Rectifier Applications. • Low forward voltage (VF max=0.55V)\n• Fast reverse recovery time (trr max=10ns)\n• Composite type with 2 diodes contained in the CPH package currently in use, improving the mountingeffi ciency greatly\n• The chips incorporated are both equivalent to the SB05-03C;

Schottky Barrier Diode 30V, 0.5A, Low IR, Non-Monolithic Dual CPH5 Common Cathode

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Schottky Barrier Diode 30 V, 0.5 A, Low IR

Features • Low Forward Voltage (VF Max = 0.55 V) • Fast Reverse Recovery Time (trr Max = 10 ns) • Composite Type with 2 Diodes Contained in the CPH Package Currently in Use, Improving the Mounting Efficiency Greatly • The Chips Incorporated are Both Equivalent to the SB05−03C • This Device i

Schottky Barrier Diode 30V, 0.5A, Low IR, Non-Monolithic Dual CPH5 Common Cathode

文件：323.3 Kbytes Page：6 Pages

封装/外壳：SC-74A，SOT-753 包装：管件 描述：DIODE ARRAY SCHOTTKY 30V 5CPH 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Barrier Diode 30V, 0.5A, Low IR, Non-Monolithic Dual CPH5 Common Cathode

文件：323.3 Kbytes Page：6 Pages

封装/外壳：SC-74A，SOT-753 包装：散装 描述：DIODE ARRAY SCHOTTKY 30V 5CPH 分立半导体产品 二极管 - 整流器 - 阵列

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

文件：24.81 Kbytes Page：2 Pages