50 - 6000 MHz Cascadable InGaP HBT Active Bias MMIC Amplifier

Qorvo's SBB5089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB5089Z does not require a d • Wideband Flat Gain to 4GHz: ±1.1dB\n• P1dB = 20.4dBm at 1950MHz\n• Single Fixed 5V Supply\n• Robust 1000V ESD, Class 1C\n• Patented Thermal Design\n• Low Thermal Resistance;

50MHz-6000MHz, Cascadable Amplifier

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50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：535.16 Kbytes Page：10 Pages

50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：535.16 Kbytes Page：10 Pages

50MHz-6000MHz, Cascadable Amplifier

文件：1.10516 Mbytes Page：11 Pages

50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：535.16 Kbytes Page：10 Pages

50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：535.16 Kbytes Page：10 Pages

SUPERmini. SURFACE MOUNT NPN SILICON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST5088, CMST5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high gain and low noise. Marking Codes are 1QC, 1RC respectively.

NPN (LOW NOISE TRANSISTOR)

NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISOTR

丝印代码：1R；NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC-70; SOT323 plastic package. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V). APPLICATIONS • Low-noise input stages in audio equipment.

TP5089 DTMF (TOUCH-TONE) Generator

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