50 - 850 MHz Cascadable InGaP HBT Active Bias MMIC Amplifier

Qorvo's SBB2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB2089Z does not require a d • OIP3 = 43dBm at 240MHz\n• P1dB = 20dB at 500MHz\n• Single Fixed 5V Supply\n• Robust 2000V ESD, Class 2\n• Patented Thermal Design Bias Circuit\n• Low Thermal Resistance;

50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：456.49 Kbytes Page：7 Pages

50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：456.49 Kbytes Page：7 Pages

50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：456.49 Kbytes Page：7 Pages

50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

文件：456.49 Kbytes Page：7 Pages

9-18GHz Frequency Multiplier

Description The CHX2089 is a cascadable by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify

S2-Compatible 5-Input 2-Output Audio/Video Switch

Description The CXA2089Q/S is a 5-input, 2-output audio/video switch featuring I2C bus compatibility for TVs. This IC has input pins that are compatible with S2 protocol. Features • 3 inputs that are compatible with S2 protocol • Serial control with I2C bus • 5 inputs, 2 outputs

S2-Compatible 5-Input 2-Output Audio/Video Switch

Description The CXA2089Q/S is a 5-input, 2-output audio/video switch featuring I2C bus compatibility for TVs. This IC has input pins that are compatible with S2 protocol. Features • 3 inputs that are compatible with S2 protocol • Serial control with I2C bus • 5 inputs, 2 outputs

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz