SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 45V CURRENT: 30.0A

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 45V CURRENT: 30.0A FEATURE High current capability, Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed 250°C /10sec/0.375 lead length at 5 lbs tension

30A DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

30A High Power Schottky Barrier Rectifiers

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SCHOTTKY BARRIER RECTIFIERS

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功率肖特基二极管(IF ≧ 1A)

Schottky Barrier Rectifier

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封装/外壳：TO-220-3 包装：管件 描述：SCHOTTKY BARRIER RECTIFIER 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

LM3045/LM3046/LM3086 Transistor Arrays

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LM3045/LM3046/LM3086 Transistor Arrays

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