2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

2.0A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

SCHOTTKY BARRIER RECTIFIER DIODES

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SCHOTTKY BARRIER RECTIFIER DIODES

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2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

BATTERY ELIMINATOR

DESCRIPTION The GS-R28.0BE is a switch mode constant voltage BATTERY ELIMINATOR that can deliver an output voltage of 7.5 V at 0,75 A of DC output current (Peak output current = 1.8 Ap). Two versions of the INPUT PLUG ADAPTOR are available: WASHER TIP VERSION: GS-R28.0BE-E (Ordering Number) SP

Silicon epitaxial planar type variable resistor

Silicon epitaxial planar type For reduced voltage and temperature compensation ■Features •Extremely small reverse current IR •High reliability with planar structure •Wide forward voltage VFrange

Silicon Complementary Trasistors Audio Power Amplifier

Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: • High Power Dissipation: PC = 100W • Collector–Emitter Breakdown Voltage: V(BR)C

General-purpose triggering circuit

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