20 Ampere low vf Schottky diode

Features Low Forward Voltage Drop Reliable High Temperature Operation Softest, Fast Switching Capability 150℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant Typical Applications Device optimized for utra-low forward voltagel drop to maximize efficiency in Power Supply a

低压降肖特基二极管

LOW VF SCHOTTKY RECTIFIER

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UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

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SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara