丝印代码：SB2045CT；20A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free p

20A Dual Schottky Barrier Rectifier

20A Dual Schottky Barrier Rectifier Features ! Schottky Barrier Chip ! Guard Ring for Transient Protection ! Low Forward Voltage Drop ! Low Reverse Leakage Current ! High Surge Current Capability ! Plastic Material has UL Flammability Classification 94V-O

Schottky Barrier Rectifier

20A Power Schottky Barrier Rectifiers - 20V-200V Features • For use in low voltage, high frequency inverters, free wheelling, and polarity protectionapplications • Offer 10A half wave and 20A full wave rectification. • Low power loss, high efficiency. • High current capability, low forward vo

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

20A DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

20A DUAL SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIER VOLTAGE: 45V CURRENT: 20.0A

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SCHOTTKY BARRIER RECTIFIERS

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功率肖特基二极管(IF ≧ 1A)

20A High Power Schottky Barrier Rectifiers

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封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TO-220AB, SKY 分立半导体产品 二极管 - 整流器 - 阵列

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara