Schottky Barrier Diode

Features • Low switching noise • Halogen free compliance • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm) Applications • High frequency rectification (switching regula

Schottky Barrier Diode 30V, 2.0A Rectifier

30V, 2.0A Rectifier Features • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Applications • High frequency rectification (switching regulator

肖特基势垒整流器，30V，2A，低 IR，单 MCPH6

SB2003M is Schottky Barrier Diode, 30V, 2A, Low IR, Single MCPH6 for High frequency rectification (switching regulators, converters, choppers). • Low switching noise\n• Low leakage current and high reliability due to highly reliable planar structure\n• Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm);

30V, 2.0A Rectifier

文件：147.67 Kbytes Page：3 Pages

Schottky Barrier Diode

Features • Low switching noise • Halogen free compliance • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm) Applications • High frequency rectification (switching regula

Schottky Barrier Diode

Features • Low switching noise • Halogen free compliance • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm) Applications • High frequency rectification (switching regula

30V, 2.0A Rectifier

文件：147.67 Kbytes Page：3 Pages

封装/外壳：6-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 2A 6MCPH 分立半导体产品 二极管 - 整流器 - 单

丝印代码：A3；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages