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SB120S

丝印代码:SB120S;Bridge Rectifiers

Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in high frequency AC/DC bridge full wave rectification for power supply, lighting b

SAMYANG

三阳电子

SB120S

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

DSK

SB120S

Schottky Barrier Rectifier Diodes

Schottky Barrier Rectifier Diodes • Nominal current 1 A • Repetitive peak reverse voltage 20...100 V • Plastic case ~DO-41 ~DO-204AC • Weight approx. 0.4 g • Plastic material has UL classifica

DIOTEC

德欧泰克

SB120S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound ● 1.0 ampere operation at TL=90°C with no thermal runaway ● For use in low voltage,

GOOD-ARK

固锝电子

SB120S

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

BILIN

银河微电

SB120S

1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere)

VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● 1 ampere operation at TA=75 ¢J with no thermal runaway ● Exceeds environmental standards of MIL-S-1

PANJIT

強茂

SB120S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ◆ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Low power loss,high efficiency ◆ High forward surge current capability ◆

SY

顺烨电子

SB120S

1 AMPERE SCHOTTKY BARRIER RECTIFIERS

VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • 1 ampere operation at TA =75°C with no thermal runaway. • Exceeds environmental standards of MIL-S-19500

TRSYS

Transys Electronics

SB120S

Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

LUGUANG

鲁光电子

SB120S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ◆ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Low power loss,high efficiency ◆ High forward surge current capability ◆

SHUNYE

顺烨电子

SB120S

SCHOTTKY BARRIER RECTIFIER

文件:584.54 Kbytes Page:2 Pages

CHENDA

辰达半导体

SB120S

SCHOTTKY BARRIER RECTIFIERS

文件:59.82 Kbytes Page:2 Pages

PANJIT

強茂

SB120S

SCHOTTKY BARRIER RECTIFIERS

文件:38.67 Kbytes Page:2 Pages

PANJIT

強茂

SB120S

Schottky Barrier Rectifier Diodes

文件:91.55 Kbytes Page:2 Pages

DIOTEC

德欧泰克

SB120S

肖特基二极管

GALAXY

银河微电

SB120S

Schottky Diodes

DIOTEC

德欧泰克

SB120S

Power Schottky

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverter

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

文件:38.67 Kbytes Page:2 Pages

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

文件:59.82 Kbytes Page:2 Pages

PANJIT

強茂

Schottky Barrier Rectifier Diodes

文件:91.55 Kbytes Page:2 Pages

DIOTEC

德欧泰克

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

MOTOROLA

摩托罗拉

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

NEC

瑞萨

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

SB120S产品属性

  • 类型

    描述

  • Package:

    DO-41

  • VRRM:

    20 V

  • IFAV:

    1.00 A

  • Tjmax:

    150 °C

  • VF:

    0.50 V

  • IF:

    1.00 A

  • IFSM:

    30.00 A

  • IR:

    1000.000 µA

  • Cj:

    pF

  • VR:

    V

更新时间:2026-5-19 11:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
ON/DIODES/PANJIT
24+
A-405
43000

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