Pre-Amplifier, Low Level & Low Noise

FEATURES Power dissipation CM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

SOT-523 Plastic-Encapsulate Transistors

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NPN小信号三极管

S9014T_15

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NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon