NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.4Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Marking:S9014 •LeadFreeFinish/RoHSCompliant(PSuffixdes

NPNSiliconTransistors

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 45V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPNSILICONTRANSISTOR

FEATURES Powerdissipation PCM:0.4W(Tamb=25°C) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors NPNsilicon

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,C andD,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistorST9015is recommended. Onspecialrequest,thesetransistorscanbe

FairchildQFETforSynchronousRectification

Introduction FairchildiscurrentlydevelopingandmarketinganewQFETseriesthathasimprovedRDS(on),gatecharge,andswitchingspeedcharacteristics.ThesuperiorfeaturesoftheseQFETsareveryusefulforincreasingtheefficiencyoflowoutputvoltagepowersupplies,makingitspecially

NPNEPITAXIALSILICONTRANSISTOR

PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015