NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.4Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9014 • Lead Free Finish/RoHS Compliant (P Suffix des

NPN Silicon Transistors

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中等功率双极型晶体管

NPN Silicon Transistors

文件：185.18 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 45V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications

Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.)

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015