MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance (30 mS typ.) • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range with less steep slope • SMD package • Lead (Pb)-free component • Component in acc

MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage

MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance (30 mS typ.) • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range with less steep slope • SMD package • Lead (Pb)-free component • Component in acc

MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance (30 mS typ.) • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range with less steep slope • SMD package • Lead (Pb)-free component • Component in acc

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

Silicon Diode, Dual, Common Cathode, High Speed

Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits.

RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS

DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposes. FEATURES SUMMARY ■ 470 - 860 MHz ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DE