Silicon Power Rectifier

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封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode Switching 600V 125A 2-Pin DO-8

Diode and Rectifier Devices

125A,100V-1600V rectifier in DO8 package

Standard Rectifier (trr more than 500ns)

125A,100V-1600V rectifier in DO8 package

包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

5-V Low-Drop Voltage Regulator

Features • Low-drop voltage • Very low quiescent current • Low starting current consumption • Integrated temperature protection • Protection against reverse polarity • Input voltage up to 42 V • Overvoltage protection up to 65 V (≤ 400 ms) • Short-circuit proof • Suited for automotive ele

NMOS 4-BIT MICROCONTROLLER

NMOS 4-BIT MICROCONTROLLER

POW-R-BLOK Dual SCR/Diode Isolated Module 60 Amperes / Up to 1600 Volts

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