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1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

更新时间:2025-11-2 14:32:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DEI
24+
SMD
1680
一级代理原装进口现货
ISSI
1923+
TSOP44
8900
公司原装现货特价长期供货欢迎来电咨询
ISSI
24+
TSOP
9167
ISSI
25+
TSOP44
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI
23+
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
24+
TSOP
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
ADI
22+
N/A
60000
专注配单,只做原装现货
ISSI
24+
TSOP
6430
原装现货/欢迎来电咨询
ISSI
2016+
TSOP44
6000
公司只做原装,假一罚十,可开17%增值税发票!
专业ISSI
23+
TSOP44
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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