型号 功能描述 生产厂家&企业 LOGO 操作

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

更新时间:2025-8-10 13:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SPANSION
2402+
BGA
8324
原装正品!实单价优!
SPANSION
23+
FBGA
50000
全新原装正品现货,支持订货
SPANSION
23+
BGA
9
原装正品现货
SPANSION
23+
11
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
SPANSION
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SPANSION
23+
BGA
50000
全新原装正品现货,支持订货
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
SPANSION
08+
BGA
9633
只做原厂原装,认准宝芯创配单专家
Cypress
22+
9000
原厂渠道,现货配单

S29GL512N10FAI数据表相关新闻