位置：首页 > IC中文资料第3017页 > S29GL128N11TF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 |   | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5 | spansion 飞索 | | ||
NOR闪存 Nor | Infineon 英飞凌 | | ||
32Mb – 2Gb 3.0V High Performance Parallel NOR Flash | Infineon 英飞凌 | | ||
封装/外壳：56-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR） 描述：IC FLASH 128MBIT PARALLEL 56TSOP 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
32Mb – 2Gb 3.0V High Performance Parallel NOR Flash | Infineon 英飞凌 | | ||
封装/外壳：56-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR） 描述：IC FLASH 128MBIT PARALLEL 56TSOP 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
S29GL128N11TF产品属性
- 类型
描述
- 型号
S29GL128N11TF
- 制造商
Spansion
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPANSIO |
23+ |
TSOP56 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SPANSION |
22+ |
TSOP56 |
12245 |
现货,原厂原装假一罚十! |
|||
SPANSION |
2023+ |
TSOP |
5800 |
进口原装,现货热卖 |
|||
SPANSION |
25+ |
TSSOP |
2658 |
原装正品!现货供应! |
|||
SPANSION |
23+ |
TSOP56 |
22600 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SPANSION |
17+ |
TSSOP |
444 |
原装 |
|||
SPANSION |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SPANSION |
23+ |
TSSOP56 |
50000 |
全新原装正品现货,支持订货 |
|||
SPANSION |
TSOP-56 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SPANSION |
23+ |
SOP |
50000 |
全新原装正品现货,支持订货 |
S29GL128N11TF规格书下载地址
S29GL128N11TF参数引脚图相关
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- sanken
- sa950
- sa28
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- s8550
- s8050三极管
- s8050
- s7-200
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- s5230
- s510b
- S2A_13
- S2A_11
- S2A_10
- S2A_1
- S2A_09
- S2A_07
- S2A_06
- S2A_05
- S29WS-P
- S29WS-N
- S29WS-J
- S29PL-N
- S29PL-J
- S29NS-P
- S29NS-N
- S29NS-J
- S29GL-P
- S29GL-N
- S29GL-M
- S29GL-A
- S29GL128P10FFI020
- S29GL128P10FFI012
- S29GL128P10FFI010
- S29GL128P10FAIR20
- S29GL128P10FAI022
- S29GL128P10FAI020
- S29GL128P10FAI010
- S29GL128N90TFIR20
- S29GL128N90TFIR10
- S29GL128N90TFAR23
- S29GL128N90TAIR20
- S29GL128N90TAIR10
- S29GL128N90FFIR20
- S29GL128N90FFIR10
- S29GL128N90FAIR20
- S29GL128N11TFIV20
- S29GL128N11TFIV10
- S29GL128N11TFI020
- S29GL128N11TFI010H
- S29GL128N11TFA020
- S29GL128N11TAI010
- S29GL128N11FFVR10
- S29GL128N11FFIV20
- S29GL128N11FFIV10
- S29GL128N11FFIIH0
- S29GL128N11FFI020
- S29GL128N11FFI010
- S29GL128N11FFA013
- S29GL128N11FFA010
- S29GL128N11FAIS30
- S29GL128N11FAI023
- S29GL128N11FAI020
- S29GL128N10TFI020
- S29GL128N10TF101
- S29GL128N10FFI020
- S29GL128N10FFI010
- S29GL128M90TFIR10
- S29GL128M90TAIR13
- S29GL128M90TAIR10
- S29GL128M11TFIR20
- S29CL-J
- S29CD-J
- S29CD-G
- S29AW
- S-2957
- S-29430
- S-2934A
- S2934A
- S-29255
- S-29130
- S-2900A
- S28AW
- S-2864B
- S-2860B
- S2829
- S2818A
- S2818
- S-2817A
- S2815S
- S2815D
S29GL128N11TF数据表相关新闻
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2023-12-12S29GL128S90DHI020
S29GL128S90DHI020
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原装正品现货
2022-6-30S29GL256S10FHIV10存储器
S29GL256S10FHIV10 存储器IC XC4VFX12-11FFG668C XC4VFX12-11FFG668I XC4VFX12-10SFG363C XC4VFX12-10SFG363I XC4VFX12-11SFG363C XC4VFX12-11SFG363 XC4VLX15-10SFG363C XC4VLX15-10SFG363I XC4VLX15-11SFG363C XC4VLX15-11SFG363I XC4VLX25-10SFG363C XC4VLX25-10SFG363I XC4VLX25-11SFG363C
2021-7-13S29AL032D90TFI04
128 Mbit SOIC-8 SPI NOR闪存 , SOIC-8 NOR闪存 , S29GL512N/256N/128N NOR闪存 , USON-8 QPI, SPI NOR闪存 , - 55 C NOR闪存 , 1.95 V 1.65 V NOR闪存
2020-7-8
DdatasheetPDF页码索引
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