128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)

Features  CMOS 3.0 Volt Core with Versatile I/O  Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 24- or 32-bit address options – Serial Command set and footprint compatible with S25FL-A, S2

MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O

General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process li

封装/外壳：16-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC FLASH 128MBIT SPI/QUAD 16SOIC 集成电路（IC） 存储器

Quad SPI 闪存

Quad SPI 闪存

封装/外壳：16-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC FLASH 128MBIT SPI/QUAD 16SOIC 集成电路（IC） 存储器

Quad SPI 闪存

128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

Architectural Advantages  Single power supply operation – Full voltage range: 2.7 to 3.6V read and write operations  Memory architecture – Uniform 4 kB sectors – 256-byte page size  Program – Page Program (up to 256 bytes) in 0.7 ms (typical) – Progra

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O

General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process li

256Mbit (32Mbyte)/128Mbit (16Mbyte),3.0 V FL-L Flash Memory

文件：1.28354 Mbytes Page：158 Pages

128-Mbit, 3.0 V Flash Memory

文件：1.13485 Mbytes Page：44 Pages