SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. HIGH RELIABILITY. LOW FREQUENCY MEDIUM POWER AMPLIFIERSDRIVER STAGE AMPLIFIERS. FEATURES . Excellent hFE vs. Collector Current Characteristics hFE ( 2 )=23Min.

AM/FM-IF/MPX Tuner System for Radio-Casette Recorders, Music Centers

Overview The LA1805 is a characteristics-improved version of the LA1810, with the same pin assignment and package as those of the LA1810. Improvements are made on the following point : • Separation (35dB→48dB) and its dependence on free running frequency (Sep – fF Characteristic on page 4).

1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS handsets and basestations. The design is optimized for 3.0 Volt operation in systems such as Japan’s PHS, Europe’s DECT and the emerging North Americ

Integrated Circuit Recording Video Signal Processing Circuit

Description: The NTE1805 is an integrated circuit in a 28–Lead DIP type package designed for use in VCR recording video signal processing. Features: • Dynamic Emphasis Characteristics: 5.5dB (at f = 1MHz, input level = –20dB) • Built–In Carrier Interleaving Circuit • Built–In Low

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages