SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . Excellent hpE Linearity : h KE (0. lmA)/hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1423(hFE=70~400; . Small Collector Output Capacitance: C ob =3. 5pF(Max.)

External SCSI U320 LVD-SE Active Terminator (VHDCI68 M)

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TYPE N PLUG SOLDERLESS CRIMP LMR400

ELECTRICAL: IMPEDANCE: 50 OHMS WITHSTAND VOLTAGE: 2500V FREQUENCY RANGE: 0~6 GHz VSWR: 500 CYCLE CABLE RETENTION: > 40 POUNDS MISCELLANEOUS: COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATIONS PS-0031. ALL DIMENSIONS ARE FOR REF

1420A Series DC Power SPD for Photovoltaic Applications

Features n High energy MOV technology with Advanced Thermal Disconnector (TD+) n Status indicator n Replaceable modular design n For Common Mode and Differential Mode protection n Remote signaling capability n Complies with UL 1449 standard n RoHS compliant* Applications n DC power sy

Armoire murale en acier doux de type 1

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DC Power SPD for Photovoltaic Applications

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N-Channel 20-V MOSFET

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