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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
S1226 | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 |   | |
S1226 | SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | |
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
SI PHOTO DIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc. | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiodes 文件：261.79 Kbytes Page：6 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
Si photodiode For high power UV monitor, and UV to visible, precision photometry 文件：93.23 Kbytes Page：2 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
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S1226产品属性
- 类型
描述
- 型号
S1226
- 制造商
HAMAMATSU
- 制造商全称
Hamamatsu Corporation
- 功能描述
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAMAMATSU |
25+23+ |
DIP-2 |
29358 |
绝对原装正品全新进口深圳现货 |
|||
HAMAMATS |
23+ |
CAN2 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
HAMAMATSU/滨松 |
22+23+ |
DIP-2 |
8000 |
新到现货，只做原装进口 |
|||
HAMAMATSU/滨松 |
24+ |
DIP-2 |
455 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
HAMAMATSU |
CAN2 |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
HAMAMATSU滨松 |
24+ |
DIP |
9874 |
郑重承诺只做原装进口现货 |
|||
HAMAMATSU/滨松 |
24+ |
DIP-2 |
8000 |
原装，正品 |
|||
HAMAMATSU |
24+ |
CAN |
9650 |
只做原装，常备公司现货库存，可出样品，量大从优！ |
|||
SHARP |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|||
HAMAMAT |
专业铁帽 |
CAN2 |
1 |
原装铁帽专营,代理渠道量大可订货 |
S1226规格书下载地址
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S1226数据表相关新闻
S-1137A27-I6T2G
https://hch01.114ic.com/
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2019-2-24
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