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S1226

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

S1226

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

适用于紫外线到可见光波段 精密光度测定 抑制近红外灵敏度

\n- 高紫外灵敏度:QE=75 % (λ=200 nm)\n- 抑制近红外灵敏度\n- 低暗电流\n- 高可靠性;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

适用于紫外到可见光,精密光度计测,抑制近红外灵敏度

\n-高紫外灵敏度: QE=75 % (λ=200 nm)\n-抑制近红外灵敏度\n-低暗电流\n-高可靠性;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SI PHOTO DIODE

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Features ● High UV sensitivity: QE 75 (λ=200 nm) ● Suppressed IR sensitivity ● Low dark current ● High reliability Applications ● Analytical equipment ● Optical measurement equipment, etc.

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiodes

文件:261.79 Kbytes Page:6 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For high power UV monitor, and UV to visible, precision photometry

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Si photodiode For high power UV monitor, and UV to visible, precision photometry

文件:93.23 Kbytes Page:2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Micropower Thermocouple Cold Junction Compensator

Micropower Thermocouple Cold Junction Compensator

AD

亚德诺

12-Bit 300ksps ADCs with FIFO, Temp Sensor, Internal Reference

General Description The MAX1226/MAX1228/MAX1230 are serial 12-bit analog-to-digital converters (ADCs) with an internal reference and an internal temperature sensor. These devices feature on-chip FIFO, scan mode, internal clock mode, internal averaging, and AutoShutdown™. The maximum sampling rate

MAXIM

美信

Y LUMINANCE TRANSIENT IMPROVER IC

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

TOSHIBA

东芝

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (θ1/2) of 5°. These devices are spectrally and mechanically matched to the VTE12xx serie

PERKINELMER

Low Noise Very High Speed Operational Amplifier

文件:235.79 Kbytes Page:8 Pages

LINER

凌力尔特

S1226产品属性

  • 类型

    描述

  • 象元数:

    1

  • 封装:

    金属

  • 封装类型:

    TO-18

  • 制冷:

    非制冷

  • 反偏电压(最大):

    5 V

  • 光谱响应范围:

    320 to 1000 nm

  • 峰值波长:

    720 nm

  • 灵敏度:

    0.36 A/W

  • 暗电流:

    2 pA

  • 上升时间(典型值):

    0.15 μs

  • 结电容:

    35 pF

  • 测试条件:

    Ta=25 ℃, 除非特别说明均为典型值。灵敏度:λ=720 nm,暗电流: VR=10 mV,结电容: VR=0 V f=10KHz

更新时间:2026-5-16 9:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAMAMAT
23+
CAN2
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
HAMAMATSU
CAN2
6500
一级代理 原装正品假一罚十价格优势长期供货
HAMAMATSU/滨松
23+
DIP-2
495
正规渠道,只有原装!
HAMAMATS
23+
CAN2
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
HAMAMATSU/滨松
25+
DIP-2
455
市场最低 原装现货 假一罚百 可开原型号
HAMAMATSU/滨松
24+
DIP-2
25836
新到现货,只做全新原装正品
25+
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
HAMAMATSU
25+
DIP-2
32000
HAMAMATSU全新特价S1226-5BK即刻询购立享优惠#长期有货
HAMAMATSU
24+
CAN
9650
只做原装,常备公司现货库存,可出样品,量大从优!
HAMAMATSU/滨松
24+
DIP-2
5000
十年沉淀唯有原装

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