高线性、InGaP HBT增益放大器

S1002 是一款高动态范围及低成本封装的驱动放大器，工作频率是400-2700 MHz；封装采用工业标准的SOT89。 ·工作频率：400-2700 MHz\r\n·1dB压缩点的输出功率(P1dB)：+28.2dBm\r\n·三阶截止点（IP3）的输出功率：+44.2 dBm\r\n·增益（Gain）：16.5 dB@2140 MHz\r\n·140mA的驱动电流\r\n·50欧姆的输入/输出级联\r\n·供电电压：+5V\r\n·工业标准的SOT89封装\r\n·ESD：2KV、HMB：Class 2;

VOLTAGE DETECTOR WITH SENSE PIN

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Ceramic Singlelayer DC Disc Capacitors for General Purpose

FEATURES • High capacitance with small size • High stability • Crimp and straight lead styles • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Temperature compensation • Coupling and decoupling • Bypassing

Ceramic Singlelayer DC Disc Capacitors for General Purpose

FEATURES • High capacitance with small size • High stability • Crimp and straight lead styles • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Temperature compensation • Coupling and decoupling • Bypassing

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp