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型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 800V , 4A , RDS(ON)=2Ω @VGS=10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220F full-pak for through hole

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

更新时间:2026-8-1 16:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
24+
50000
CET/華瑞
23+
TO-263
360000
专业供应MOS/LDO/晶体管/有大量价格低
CET/華瑞
2511
TO-263
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价

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