The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic.

This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors.

It has a wide radiation angle and is ideal for compact optical control equipment.

Features

1) High efficiency, high output PO=11.0mW (IF=50mA).

2) Wide radiation angle θ1/2=15deg.

3) Emission spectrum well suited to silicon detectors. (λP=940nm).

4) Good current-optical output linearity.

5) Long life, high reliability.

Applications

• Optical control equipment

• Light source for remote control devices