Features

· TRCDRIVE packTM

with the 4th Generation SiC-MOSFET

· VDSS = 1200V

· Low RDS(on)

· High-speed switching possible

· Low switching losses

· Low stray inductance - 5.7nH

· Tvjmax = 175°C

· Compact design

· High power density

· Press-fit contact technology

· Integrated NTC temperature sensor

· Mountable on heatsink with thermal interface material (TIM)

· Weldable power terminals

· Cu clip technology

· Ag sinter technology for die mounting

· Higher power cycling capability

· 4.2kV DC 1s insulation