位置:X28HC256S-12 > X28HC256S-12详情

X28HC256S-12中文资料

厂家型号

X28HC256S-12

文件大小

977.81Kbytes

页面数量

21

功能描述

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

EEPROM PARALLEL 256KBIT 32KX8 5V 28SOIC W - Rail/Tube

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ROCHESTER

X28HC256S-12数据手册规格书PDF详情

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The X28HC256 also features DATA Polling and Toggle Bit Polling, two methods of providing early end of write detection.

Features

• Access time: 70ns

• Simple byte and page write

- Single 5V supply

- No external high voltages or VP-P control circuits

- Self-timed

- No erase before write

- No complex programming algorithms

- No overerase problem

• Low power CMOS

- Active: 60mA

- Standby: 500µA

• Software data protection

- Protects data against system level inadvertent writes

• High speed page write capability

• Highly reliable Direct Write™ cell

- Endurance: 1,000,000 cycles

- Data retention: 100 years

• Early end of write detection

- DATA polling

- Toggle bit polling

• Pb-free plus anneal available (RoHS compliant)

X28HC256S-12产品属性

  • 类型

    描述

  • 型号

    X28HC256S-12

  • 制造商

    Intersil Corporation

  • 功能描述

    EEPROM PARALLEL 256KBIT 32KX8 5V 28SOIC W - Rail/Tube

更新时间:2025-11-22 8:01:00
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