位置:RF2152PCBA-J > RF2152PCBA-J详情
RF2152PCBA-J中文资料
RF2152PCBA-J数据手册规格书PDF详情
Product Description
The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band.
Features
• Single 3V Supply
• 28dBm Linear Output Power
• 30dB Linear Gain
• 35 Linear Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V JCDMA/TACS Cellular Handsets
• 3V TDMA/AMPS Cellular Handsets
• Spread-Spectrum Systems
• CDPD Portable Data Cards
• Portable Battery-Powered Equipment
RF2152PCBA-J产品属性
- 类型
描述
- 型号
RF2152PCBA-J
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RFMD |
23+ |
SS0P16 |
50000 |
全新原装正品现货,支持订货 |
|||
RFMD |
24+ |
SOP |
9300 |
||||
RFMD |
24+ |
SOP |
5000 |
全现原装公司现货 |
|||
RFMD |
23+ |
SOP |
6500 |
全新原装假一赔十 |
|||
RFMD |
2022 |
SOP |
2300 |
原装现货,诚信经营! |
|||
RFMD |
24+ |
SOP |
3000 |
全新原装现货 优势库存 |
|||
RFMD |
24+ |
SOP |
26200 |
原装现货,诚信经营! |
|||
RFMD |
23+ |
SSOP16 |
45500 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
RFMD |
23+ |
SSOP16 |
5000 |
原装正品,假一罚十 |
|||
RFMD |
24+ |
NA/ |
7000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
RF2152PCBA-J 资料下载更多...
RF2152PCBA-J 芯片相关型号
- MI-PC6TR-IX
- MR33509-MP8A
- MR34509-MP8A
- MR34519-MP8A
- PSD813F3A-15UT
- PSD913F3A-15UT
- PSD914F2A-15UT
- PSD934F2A-15UT
- PT2126-C8N-NSM0-I
- PT2126-F4N-RSM0-I
- RF2140
- RF2140PCBA
- RF2146PCBA
- TB62006FW
- TB62705CF
- TB62705CFN
- TB62709N
- TB62710P
- TFMAJ170
- TFMBJ160
- TFMBJ54
- TFMBJ78
- TFMCJ48
- TFMCJ64
- TSC80C51-30CH
- TSC80C51CXXX-25CH
- VI-27YCW
- ZMM5248B
- ZMM5249B
- ZMM5252B
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
RF Micro Devices 威讯联合半导体(德州)有限公司
RF Micro Devices于1991年由Analog Devices的前员工William J. Pratt、Powell T. Seymour和Jerry D. Neal在美国北卡罗来纳州格林斯博罗创立。从一开始它就专注于为商业无线市场设计射频集成电路(RFIC)产品。其产品主要包括用于无线通信的射频集成电路放大装置(RFICs)和信号处理传输设备。它们在诸如手机、无线基础设施、无线局域网(WLAN)、有线电视/宽带、航空航天和国防等市场有广泛应用。例如,它生产手机备件,是全球主要的功率放大器供应商。它还生产用于无线基础设施、有线电视调制解调器、个人通信系统和双向数据寻呼机的组件。 R