General Description

The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM applications operating at 433MHz. The device is packaged in a low cost 16-lead plastic package with a metal backside. The device is self-contained with the exception of the output matching network and power supply feed line.

Features

• Single 3V to 5.5V Supply

• Up to 2W CW Output Power

• 33dB Small Signal Gain

• >50 Efficiency

• 400MHz to 500MHz Operation

Typical Applications

• 3.6V Analog Handsets

• Analog Communication Systems

• 400MHz Industrial Radios

• Portable Battery Powered Equipment