FEATURES

• Low-voltage operation: VDD = 1.8 to 5.5 V

• Internal memory

Program memory (ROM):

2048 × 8 bits (μPD754302, 754302(A))

4096 × 8 bits (μPD754304, 754304(A))

Data memory (RAM): 256 × 4 bits

• Variable instruction execution time effective for highspeed

operation and power saving

0.95, 1.91, 3.81, or 15.3 μs (at 4.19 MHz)

0.67, 1.33, 2.67, or 10.7 μs (at 6.0 MHz)

• Internal serial interface (1 channel)

• Powerful timer function (3 channels)

• Inherits instruction set of existing 75X Series for easy

replacement