NPN SiGe RF IC

IN A 8-PIN LEAD-LESS MINIMOLD

DESCRIPTION

The μPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and

other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency,

high gain, low power consumption.

The device is packaged in surface mount 8-pin lead-less minimold plastic package.

The device is fabricated with our SiGe HBT process UHS2-HV technology.

FEATURES

• Output Power : Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz

• Low Power : IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz

• Single Power Supply Operation : VCE = 3.6 V

• Built-in bias circuit

• 8-pin lead-less minimold (2.0 × 2.2 × 0.5 mm)