NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)

FEATURES

• 2 different built-in transistors (2SC5435, NESG2107M33)

Q1: High gain transistor

fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase noise SiGe transistor suited for OSC applications

fT = 10.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• 6-pin super lead-less minimold package (1007 PKG)