NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

• Low voltage operation

• 2 different built-in transistors (2SC5435, 2SC5786)

Q1: High-gain transistor

fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications

fT = 20.0 GHz TYP., ½S21e½2 = 13.0 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt

• 6-pin lead-less minimold package