P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

FEATURES

• 1.8 V drive available

• Low on-state resistance

RDS(on)1 = 50 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)

RDS(on)2 = 68 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A)

RDS(on)3 = 114 mΩ MAX. (VGS = −1.8 V, ID = −1.5 A)