DESCRIPTION

The μ PA2805UT1L is N-channel MOS FET designed for DC/DC converter and

power management applications of portable equipments.

FEATURES

• Low on-state resistance

RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 25 A)

RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 13 A)

• Low QG

• Thin type surface mount package with heat spreader (8-pin HVSON (3333))

• RoHS Compliant

• Halogen Free