DESCRIPTION

The μ PA2732T1A is P-channel MOS Field Effect Transistor designed

for power management applications of notebook computers and Li-ion

battery protection circuit.

FEATURES

• Low on-state resistance

RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −20 A)

RDS(on)2 = 6.7 mΩ MAX. (VGS = −4.5 V, ID = −20 A)

• Low Ciss: Ciss = 3280 pF TYP.

• Built-in gate protection diode

• Small and surface mount package (8pin HVSON)