DESCRIPTION

The μ PA2716AGR is P-Channel MOS Field Effect

Transistor designed for power management applications of

notebook computers and Lithium-Ion battery protection circuit.

FEATURES

• Low on-state resistance

RDS(on)1 = 7.0 mΩ MAX. (VGS = −10 V, ID = −7.0 A)

RDS(on)2 = 11.3 mΩ MAX. (VGS = −4.5 V, ID = −7.0 A)

• Low input capacitance

Ciss = 3000 pF TYP.

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)