DESCRIPTION

The μ PA2709GR is N-channel MOS Field Effect Transistor

designed for DC/DC converter and power management

applications of notebook computer.

FEATURES

• Low on-state resistance

RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A)

RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)

• Low QGD: QGD = 3.3 nC TYP. (VDD = 15 V, ID = 13 A)

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)