DESCRIPTION

The μ PA2680T1E is a switching device, which can be driven

directly by a 4.5 V power source.

The μ PA2680T1E incorporates a MOSFET which features a

low on-state resistance and excellent switching characteristics

and a low forward voltage Schottky Barrier Diode, and is

suitable for applications such as DC/DC converter of portable

machine and so on.

FEATURES

• 4.5 V drive available MOSFET

• Low on-state resistance MOSFET

RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A)

RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)

• Low forward voltage Schottky Barrier Diode

VF = 0.36 V TYP. (IF = 1.0 A)