SWITCHING

N-CHANNEL POWER MOS FET

FEATURES

• High voltage: VDSS = 200 V

• Gate voltage rating: ±30 V

• Low on-state resistance

RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A)

• Low input capacitance

Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V)

• Built-in gate protection diode

• Small and surface mount package (Power HSOP8)

• Avalanche capability rated