SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for DC/DC converters and power management

switch.

FEATURES

• Low on-resistance

RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)

RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A)

• Low Ciss : Ciss = 730 pF (TYP.)

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)