N-CHANNEL POWER MOS FET ARRAY

FOR SWITCHING

FEATURES

• Gate drive available at logic level (VGS = 4 V)

• High current capacity and low on-resistnace

ID(pulse) = ±20 A

RDS(on) = 0.09 Ω TYP. @VGS = 10 V

RDS(on) = 0.11 Ω TYP. @VGS = 4 V

• Easy to mount the printing board due to 2.54 mm (0.1 inch) interval

of lead pins

• Small dimension and no electrode exposure except lead pins

enable the high density mounting.