Description

The RMQS2A3636DGBA is a 1,048,576-word by 36-bit and the RMQS2A3618DGBA is a 2,097,152-word by 18-bit

synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are

controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are

suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit

configuration. These products are packaged in 165-pin plastic FBGA package.