Features

 Low collector to emitter saturation voltage

VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

 Built in fast recovery diode in one package

 Trench gate and thin wafer technology

 High speed switching

tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load)