Features

• Optimized for current resonance application

• Low collector to emitter saturation voltage

VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)

• Built in fast recovery diode in one package

• Trench gate and thin wafer technology

• High speed switching

tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 30 A, Rg = 10 Ω, Ta = 25°C, Inductive load)

• Low tail loss

Etail = 160 μJ typ. (at VCC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15 Ω, Tc = 125°C, current resonance circuit)