Features

 Reverse conducting IGBT with monolithic diode

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

 Built-in fast recovery diode (trr = 130 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

tf = 45 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , Ta = 25°C, inductive load)